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IRF6717MTR1PBF

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IRF6717MTR1PBF

MOSFET N-CH 25V 38A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF6717MTR1PBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 38A at 25°C ambient, scaling to 200A at 25°C case temperature. The low on-resistance (Rds On) of 1.25mOhm at 38A and 10V gate-source voltage ensures minimal conduction losses. The IRF6717MTR1PBF utilizes a DirectFET™ Isometric MX package, facilitating efficient thermal management with a maximum power dissipation of 96W at 25°C case temperature. Input capacitance (Ciss) is 6750pF at 13V, and gate charge (Qg) is 69nC at 4.5V, supporting fast switching speeds. Operating temperature range is -40°C to 150°C (TJ). This device is suitable for power management solutions in computing, industrial, and automotive sectors. The component is supplied in Tape & Reel packaging.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric MX
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs1.25mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id2.35V @ 150µA
Supplier Device PackageDIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6750 pF @ 13 V

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