IRF6716MTR1PBF
MOSFET N-CH 25V 39A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6716MTR1PBF, offers a 25V drain-source voltage and a continuous drain current of 39A at 25°C ambient, scaling to 180A at 25°C case temperature. This device features a low Rds(on) of 1.6mOhm at 40A and 10V Vgs, with a maximum gate charge of 59 nC at 4.5V. The input capacitance (Ciss) is a maximum of 5150 pF at 13V. Designed for surface mount applications within the DirectFET™ Isometric MX package, it achieves a maximum power dissipation of 3.6W ambient and 78W case. Operating across a temperature range of -40°C to 150°C, this MOSFET is suitable for power management applications in sectors such as automotive and industrial power supplies. The maximum gate-source voltage is ±20V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 13 V |
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