IRF6715MTRPBF
MOSFET N-CH 25V 34A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6715MTRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 25V Drain-Source Voltage (Vdss) and offers a continuous drain current capability of 34A at 25°C ambient and 180A at 25°C case temperature. The low on-resistance is specified at 1.6mOhm maximum at 34A and 10V gate-source voltage. Key parameters include a maximum gate charge of 59 nC at 4.5V and an input capacitance of 5340 pF at 13V. The device utilizes MOSFET technology and is packaged in a DirectFET™ Isometric MX for surface mounting. With a maximum power dissipation of 78W at 25°C case temperature, it is suitable for demanding applications in power supplies, voltage regulators, and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5340 pF @ 13 V |