IRF6715MTR1PBF
MOSFET N-CH 25V 34A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6715MTR1PBF, offers a 25V Drain-to-Source voltage and a continuous drain current of 34A at 25°C ambient, scaling to 180A at 25°C case temperature. This device features a low on-resistance of 1.6mOhm maximum at 34A and 10V Vgs. The gate charge is specified at 59 nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 5340 pF maximum at 13V Vds. Designed for surface mounting in the DirectFET™ Isometric MX package, it supports a maximum power dissipation of 2.8W ambient and 78W case. Operating temperature range is -40°C to 150°C. This MOSFET is suitable for applications in power management, computing, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5340 pF @ 13 V |