IRF6714MTR1PBF
MOSFET N-CH 25V 29A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6714MTR1PBF, is a 25V device with a continuous drain current of 29A at 25°C (166A pulsed). This Surface Mount component, housed in a DirectFET™ MX package, features a low Rds(on) of 2.1mOhm at 29A and 10V Vgs. It offers a maximum gate charge of 44 nC at 4.5V Vgs and an input capacitance of 3890 pF at 13V Vds. The device operates across a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 89W at 25°C (Tc). This MOSFET is commonly utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 166A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3890 pF @ 13 V |