IRF6712STRPBF
MOSFET N-CH 25V 17A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6712STRPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This device offers a 25V drain-source voltage rating and a continuous drain current capability of 17A at 25°C ambient, scaling to 68A under typical thermal conditions. With a low on-resistance of 4.9mOhm maximum at 17A and 10V Vgs, it minimizes conduction losses. The IRF6712STRPBF features a gate charge of 18 nC typical at 4.5V Vgs and an input capacitance of 1570 pF maximum. Its DirectFET™ Isometric SQ package facilitates efficient heat dissipation, supporting up to 36W of power dissipation under specific thermal management. This component is suitable for use in power management, industrial automation, and automotive systems where robust performance and low switching losses are critical. The device operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 13 V |