IRF6712STR1PBF
MOSFET N-CH 25V 17A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel IRF6712STR1PBF. This device features a 25V drain-to-source breakdown voltage and a continuous drain current capability of 17A at 25°C ambient, scaling to 68A at 25°C case temperature. It offers a low on-resistance of 4.9mOhm maximum at 17A and 10V gate-source voltage. The IRF6712STR1PBF utilizes MOSFET technology and is housed in a DirectFET™ Isometric SQ surface mount package, supplied on tape and reel. Key parameters include a maximum gate charge (Qg) of 18 nC at 4.5V Vgs and an input capacitance (Ciss) of 1570 pF at 13V Vds. Power dissipation is rated at 2.2W ambient and 36W case. Operating temperature range is -40°C to 150°C. This component is suitable for applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 13 V |
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