IRF6711STR1PBF
MOSFET N-CH 25V 19A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6711STR1PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 25V drain-source voltage and offers a continuous drain current of 19A at ambient temperature and 84A at case temperature. With a low on-resistance of 3.8mOhm at 19A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET utilizes DirectFET™ Isometric SQ packaging for enhanced thermal performance, supporting power dissipation up to 42W at case temperature. Key parameters include a gate charge of 20 nC at 4.5V and input capacitance of 1810 pF at 13V. This component is suitable for power management solutions in automotive, industrial automation, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 13 V |
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