IRF6710S2TRPBF
MOSFET N-CH 25V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6710S2TRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 25V Drain-Source Voltage (Vdss) and a continuous drain current capability of 12A at ambient temperature and 37A at case temperature. The IRF6710S2TRPBF offers a low on-resistance of 5.9mOhm maximum at 12A and 10V Vgs, with a gate drive voltage range from 4.5V to 10V. It boasts a maximum gate charge (Qg) of 13 nC at 4.5V and an input capacitance (Ciss) of 1190 pF maximum at 13V. The device is housed in a DirectFET™ Isometric S1 package, suitable for surface mounting. With a maximum power dissipation of 1.8W (Ta) and 15W (Tc), and an operating temperature range of -55°C to 175°C, it is well-suited for use in computing, power supply, and industrial automation sectors. This component is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric S1 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | DirectFET™ Isometric S1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 13 V |