IRF6706S2TR1PBF
MOSFET N-CH 25V 17A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel, part number IRF6706S2TR1PBF, is a 25V device optimized for high-efficiency power conversion applications. This DirectFET™ Isometric S1 packaged component offers a continuous drain current of 17A at 25°C ambient and 63A at 25°C case temperature. With a maximum Rds(on) of 3.8mOhm at 17A and 10V Vgs, it achieves low conduction losses. Key electrical parameters include a gate charge of 20 nC at 4.5V and input capacitance of 1810 pF at 13V. It supports gate-source voltages up to ±20V and operates across a junction temperature range of -55°C to 175°C. Power dissipation is rated at 1.8W (Ta) and 26W (Tc). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric S1 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 26W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DirectFET™ Isometric S1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 13 V |
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