IRF6691TRPBF
MOSFET N-CH 20V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6691TRPBF, is a 20V device with a continuous drain current rating of 32A at 25°C ambient and 180A at 25°C case temperature. This DirectFET™ Isometric MT packaged component features a low on-resistance of 1.8mOhm maximum at 15A and 10V Vgs. It operates with a gate-source voltage range of ±12V and a threshold voltage of 2.5V maximum. Key parameters include a maximum gate charge of 71 nC at 4.5V and input capacitance of 6580 pF at 10V. Power dissipation is rated at 2.8W ambient and 89W case temperature, with operating junction temperatures from -40°C to 150°C. This component is utilized in applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 10 V |
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