IRF6691TR1PBF
MOSFET N-CH 20V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel 20V, 32A continuous drain current at 25°C ambient, 180A at 25°C case temperature. This IRF6691TR1PBF DirectFET™ component offers a low 1.8mOhm maximum Rds(on) at 15A and 10V Vgs. Key parameters include 71 nC gate charge at 4.5V Vgs and 6580 pF input capacitance at 10V Vds. Power dissipation is rated at 2.8W ambient and 89W case. Operating temperature range is -40°C to 150°C. The device features a DirectFET™ Isometric MT surface mount package and is supplied on tape and reel. Applications include power management and switching circuits in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 10 V |
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