IRF6691TR1
MOSFET N-CH 20V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6691TR1 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current capability of 32A at 25°C ambient, scaling to 180A at 25°C case temperature. With a low on-resistance of 1.8mOhm (max) at 15A and 10V, it ensures efficient power delivery. The device offers a maximum power dissipation of 2.8W (ambient) and 89W (case). Key parameters include a gate charge (Qg) of 71 nC at 4.5V and an input capacitance (Ciss) of 6580 pF at 10V. It operates across a wide temperature range of -40°C to 150°C. The DIRECTFET™ Isometric MT package facilitates efficient thermal management. This MOSFET is suitable for power management, voltage regulation, and switching applications across various industries including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 10 V |
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