IRF6678TR1PBF
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6678TR1PBF is an N-Channel Power MOSFET featuring a 30V drain-to-source breakdown voltage. This DIRECTFET™ MX packaged device offers a continuous drain current of 30A at ambient temperature and up to 150A at case temperature, with a maximum on-resistance of 2.2mOhm at 30A and 10V gate drive. The MOSFET supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge of 65 nC at 4.5V and input capacitance of 5640 pF at 15V. Power dissipation is rated at 2.8W (ambient) and 89W (case). This component is suitable for applications in automotive, industrial, and power supply sectors. It is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
