IRF6678
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6678, offers a 30V drain-source breakdown voltage with a continuous drain current capability of 30A at ambient temperature and 150A at case temperature. Optimized for high-density power applications, this component features a low on-resistance of 2.2 mOhm maximum at 30A and 10V Vgs, facilitated by a 4.5V to 10V gate drive range. The device boasts a low gate charge of 65 nC maximum at 4.5V Vgs and an input capacitance of 5640 pF maximum at 15V Vds. Power dissipation is rated at 2.8W ambient / 89W case. The IRF6678 is presented in a Surface Mount DIRECTFET™ Isometric MX package, suitable for demanding thermal environments. This MOSFET is commonly utilized in automotive, industrial, and high-performance computing applications where efficient power switching is critical. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
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