IRF6674TR1PBF
MOSFET N-CH 60V 13.4A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6674TR1PBF is an N-Channel MOSFET designed for demanding applications. This DirectFET™ MZ packaged device offers a 60V drain-source breakdown voltage and a continuous drain current capability of 13.4A at 25°C ambient and 67A at 25°C case temperature. With a low on-resistance of 11mOhm at 13.4A and 10V gate drive, it minimizes conduction losses. The device features a maximum gate charge of 36 nC at 10V and an input capacitance of 1350 pF at 25V. Power dissipation is rated at 3.6W ambient and 89W case. Suitable for high-power switching and control applications, it operates across a temperature range of -40°C to 150°C. This surface mount component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 13.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |