IRF6668TR1PBF
MOSFET N-CH 80V 55A DIRECTFET MZManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6668TR1PBF is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 55A at 25°C (Tc). The Rds(On) is specified at a maximum of 15mOhm at 12A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 31nC (max) at 10V and an Input Capacitance (Ciss) of 1320pF (max) at 25V. The MOSFET is housed in a DirectFET™ Isometric MZ package for surface mounting, offering thermal dissipation of 89W (Tc) and 2.8W (Ta). Operating temperature ranges from -40°C to 150°C (TJ) with a maximum Gate-to-Source Voltage (Vgs) of ±20V. This component is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320 pF @ 25 V |
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