IRF6665TRPBF
MOSFET N-CH 100V 4.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6665TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100V Drain-Source voltage (Vdss) and offers a continuous drain current of 4.2A at 25°C ambient temperature, scaling to 19A at 25°C case temperature. With a maximum on-resistance (Rds On) of 62mOhm at 5A and 10V gate-source voltage, it minimizes conduction losses. The device boasts a gate charge (Qg) of 13 nC at 10V and an input capacitance (Ciss) of 530 pF at 25V, facilitating fast switching speeds. Power dissipation is rated at 2.2W (Ta) and 42W (Tc). The IRF6665TRPBF utilizes Infineon's advanced DirectFET™ Isometric SH surface mount package for optimal thermal performance. This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems. It operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SH |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DIRECTFET™ SH |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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