IRF6665TR1PBF
MOSFET N-CH 100V 4.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6665TR1PBF is an N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 4.2A at 25°C ambient and 19A at 25°C case temperature. This device offers a low on-resistance of 62mOhm maximum at 5A and 10V gate-source voltage, with a gate charge of 13nC maximum at 10V. The MOSFET utilizes Metal Oxide technology and is housed in a DirectFET™ Isometric SH surface mount package, supplied on tape and reel. Maximum power dissipation is 2.2W ambient and 42W case. This component is suitable for applications in power management, industrial automation, and computing.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SH |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DIRECTFET™ SH |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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