IRF6662TR1PBF
MOSFET N-CH 100V 8.3A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6662TR1PBF is a high-performance N-Channel MOSFET designed for demanding applications. Featuring a Drain to Source Voltage (Vdss) of 100 V, this component offers a continuous drain current capability of 8.3A at ambient temperature and 47A at case temperature. The Rds On is specified at a maximum of 22mOhm at 8.2A and 10V gate drive. With a maximum gate charge of 31 nC at 10V, it ensures efficient switching. The device boasts a low input capacitance (Ciss) of 1360 pF at 25V. Packaged in a DirectFET™ Isometric MZ for surface mounting, it supports a power dissipation of 2.8W (Ta) and 89W (Tc). Operating across a wide temperature range of -40°C to 150°C, this MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 8.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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