IRF6655TRPBF
MOSFET N-CH 100V 4.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6655TRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 4.2A at 25°C ambient and 19A at 25°C case temperature. With a maximum on-resistance of 62mOhm at 5A and 10V gate-source voltage, it offers low conduction losses. The MOSFET utilizes DirectFET™ Isometric SH packaging for enhanced thermal performance, supporting up to 42W of power dissipation. Key parameters include a gate charge of 11.7 nC and input capacitance of 530 pF, facilitating efficient switching. This component is suitable for demanding applications within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SH |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 25µA |
| Supplier Device Package | DIRECTFET™ SH |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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