IRF6655TR1PBF
MOSFET N-CH 100V 4.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRF6655TR1PBF, is an N-Channel device featuring a 100V drain-source breakdown voltage. This component offers continuous drain current capabilities of 4.2A at a typical ambient temperature (Ta) and 19A at a case temperature (Tc). The Rds(On) is specified at a maximum of 62mOhm at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 11.7 nC at 10V and input capacitance (Ciss) of 530 pF at 25V. Power dissipation is rated at 2.2W (Ta) and 42W (Tc). The device is housed in a DirectFET™ Isometric SH package for surface mounting and operates across a temperature range of -40°C to 150°C. This MOSFET is utilized in applications such as power management and switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SH |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 25µA |
| Supplier Device Package | DIRECTFET™ SH |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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