IRF6655TR1
MOSFET N-CH 100V 4.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6655TR1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C case temperature, with a 4.2A rating at 25°C ambient temperature. The Rds(On) is specified at a maximum of 62mOhm at 5A and 10V gate drive. With a low gate charge (Qg) of 11.7 nC max at 10V, it facilitates fast switching speeds. The device offers a maximum power dissipation of 42W (Tc) and 2.2W (Ta), suitable for demanding thermal environments. The DIRECTFET™ Isometric SH package enables efficient thermal performance and a reduced footprint, commonly utilized in computing, industrial, and consumer electronics power management solutions. It operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SH |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 25µA |
| Supplier Device Package | DIRECTFET™ SH |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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