IRF6648TR1PBF
MOSFET N-CH 60V 86A DIRECTFET MNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6648TR1PBF is an N-Channel Power MOSFET featuring a 60V drain-source voltage (Vdss) and continuous drain current (Id) of 86A at 25°C (Tc). This component utilizes Metal Oxide technology and is housed in a DirectFET™ Isometric MN package, suitable for surface mounting. Key electrical parameters include a maximum Rds(On) of 7mOhm at 17A and 10V, a gate charge (Qg) of 50 nC at 10V, and an input capacitance (Ciss) of 2120 pF at 25V. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). The operating temperature range is -40°C to 150°C (TJ). This device is commonly employed in power supply, automotive, and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 25 V |
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