IRF6648TR1
MOSFET N-CH 60V 86A DIRECTFET MNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6648TR1. This component features a 60V drain-to-source voltage and a continuous drain current of 86A at 25°C (Tc). Designed for demanding applications, it offers a low on-resistance of 7mOhm maximum at 17A and 10V gate-source voltage. The device utilizes MOSFET technology and is housed in a Surface Mount DirectFET™ Isometric MN package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 50 nC maximum at 10V and an input capacitance (Ciss) of 2120 pF maximum at 25V. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). Operating temperature range is -40°C to 150°C (TJ). This MOSFET is suitable for various industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 25 V |
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