IRF6646TR1
MOSFET N-CH 80V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6646TR1 is a N-Channel MOSFET in a DIRECTFET™ Isometric MN package, designed for high-efficiency power switching applications. This component features a Drain-to-Source voltage (Vdss) of 80V and a continuous drain current (Id) of 12A at ambient temperature (Ta) and 68A at case temperature (Tc). With a maximum Rds On of 9.5mOhm at 12A and 10V Vgs, it offers low conduction losses. The device boasts a maximum power dissipation of 2.8W (Ta) and 89W (Tc), with a low gate charge (Qg) of 50 nC at 10V. Operating from -40°C to 150°C, it is suitable for demanding applications in industrial power supplies, automotive electronics, and telecom infrastructure. Its DIRECTFET™ packaging facilitates efficient thermal management and high-density board designs.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 25 V |
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