IRF6645TR1PBF
MOSFET N-CH 100V 5.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6645TR1PBF, is a 100V device with a continuous drain current of 5.7A at ambient temperature and 25A at case temperature. This DIRECTFET™ SJ package component offers a maximum Rds On of 35mOhm at 5.7A and 10V Vgs. Key parameters include a gate charge (Qg) of 20 nC @ 10V and input capacitance (Ciss) of 890 pF @ 25V. Power dissipation is rated at 2.2W (Ta) and 42W (Tc). The device operates across a temperature range of -40°C to 150°C. This component is suitable for applications in power management, industrial motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SJ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | DIRECTFET™ SJ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |
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