IRF6645
MOSFET N-CH 100V 5.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6645 is an N-Channel Power MOSFET designed for efficient power conversion applications. This component features a 100V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.7A at 25°C ambient, scaling to 25A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 35mOhm maximum at 5.7A and 10V gate-source voltage. With a maximum power dissipation of 3W (ambient) and 42W (case), the IRF6645 is available in a surface mount DIRECTFET™ Isometric SJ package, offering excellent thermal performance. Key parameters include a gate charge (Qg) of 20 nC maximum at 10V and input capacitance (Ciss) of 890 pF maximum at 25V. This MOSFET is suitable for use in power management, computing, and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | DirectFET™ Isometric SJ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | DIRECTFET™ SJ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
