IRF6644TR1
MOSFET N-CH 100V 10.3A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6644TR1: This N-Channel MOSFET features a 100V drain-source breakdown voltage and a continuous drain current rating of 10.3A at 25°C ambient and 60A at 25°C case temperature. The DIRECTFET™ Isometric MN package offers low thermal resistance, enabling high power dissipation of 2.8W ambient and 89W case. With a maximum Rds(on) of 13mOhm at 10.3A and 10V gate drive, and a gate charge of 47nC at 10V, this component is optimized for efficient switching. Input capacitance (Ciss) is rated at 2210pF maximum at 25V. The device operates across a temperature range of -40°C to 150°C and has a maximum gate-source voltage of ±20V. Applications include power management and high-current switching in industrial and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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