IRF6644
MOSFET N-CH 100V 10.3A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6644 is a N-Channel MOSFET designed for demanding applications. This component features a 100V drain-to-source voltage (Vdss) and offers a continuous drain current of 10.3A at 25°C (Ta) and 60A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 13mOhm at 10.3A and 10V gate drive. With a maximum power dissipation of 2.8W (Ta) and 89W (Tc), it utilizes Metal Oxide technology and is housed in a Surface Mount DIRECTFET™ Isometric MN package. Key parameters include a gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 2210 pF at 25V. The operating temperature range is -40°C to 150°C (TJ). This MOSFET is commonly found in power supply designs and high-efficiency power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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