IRF6643TRPBF
MOSFET N-CH 150V 6.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF6643TRPBF, offers 150V drain-source breakdown voltage and continuous drain current capability of 6.2A at 25°C ambient and 35A at 25°C case temperature. This device features a low Rds(on) of 34.5mOhm maximum at 7.6A and 10V gate drive, with a maximum gate charge of 55 nC at 10V. Designed for surface mounting, it is housed in a DirectFET™ Isometric MZ package, providing excellent thermal performance with a maximum power dissipation of 89W at 25°C case temperature. The IRF6643TRPBF is suitable for applications in power management, industrial automation, and automotive systems. Operating temperature ranges from -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 34.5mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
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