IRF6643TR1PBF
MOSFET N-CH 150V 6.2A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6643TR1PBF is an N-Channel MOSFET designed for demanding applications. This DirectFET™ MZ packaged device offers a Vds of 150V and a continuous drain current capability of 6.2A at ambient temperature (Ta) and 35A at case temperature (Tc). With a low Rds On of 34.5mOhm at 7.6A and 10V, it minimizes conduction losses. The device features a gate charge (Qg) of 55 nC maximum at 10V and an input capacitance (Ciss) of 2340 pF maximum at 25V. Maximum power dissipation is 2.8W (Ta) and 89W (Tc). Operating temperature ranges from -40°C to 150°C. This component is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 34.5mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
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