IRF6641TR1PBF
MOSFET N-CH 200V 4.6A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6641TR1PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 4.6A at ambient temperature and 26A at case temperature. The IRF6641TR1PBF boasts a low on-resistance of 59.9mOhm maximum at 5.5A and 10V Vgs, with a maximum gate charge of 48 nC at 10V. It operates with a gate drive voltage up to 10V and has a maximum Vgs of ±20V. The MOSFET is housed in a DirectFET™ Isometric MZ package, suitable for surface mounting. Power dissipation is rated at 2.8W ambient and 89W at case temperature. This component finds application in power supply units, motor control, and lighting systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 59.9mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Supplier Device Package | DIRECTFET™ MZ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
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