IRF6638TRPBF
MOSFET N-CH 30V 25A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel, part number IRF6638TRPBF, offers a 30V drain-source voltage and 25A continuous drain current at 25°C ambient, scaling to 140A at 25°C case temperature. This device features a low Rds(on) of 2.9mOhm maximum at 25A and 10V Vgs, with a gate charge (Qg) of 45nC maximum at 4.5V. Input capacitance (Ciss) is 3770pF maximum at 15V Vds. The IRF6638TRPBF utilizes a DirectFET™ Isometric MX surface mount package, delivering up to 89W of power dissipation at 25°C case temperature. Its operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in the automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |
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