IRF6638TR1PBF
MOSFET N-CH 30V 25A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6638TR1PBF is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current rating of 25A at 25°C ambient, scaling to 140A at 25°C case temperature. The low on-resistance of 2.9mOhm at 25A and 10V gate-source voltage, combined with a maximum gate charge of 45nC at 4.5V, facilitates efficient switching. With a maximum power dissipation of 2.8W (ambient) and 89W (case), and an operating temperature range of -40°C to 150°C (TJ), it is suitable for demanding environments. The DIRECTFET™ MX package offers excellent thermal performance for surface mount applications. Key parameters include input capacitance (Ciss) of 3770pF at 15V, and a gate-source voltage (Vgs) tolerance up to ±20V. This device finds application in automotive, industrial power supplies, and high-performance computing.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |
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