IRF6637TR1PBF
MOSFET N-CH 30V 14A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET, part number IRF6637TR1PBF, is an N-Channel device with a 30 V drain-source voltage. This surface mount component features a low on-resistance of 7.7 mOhm maximum at 14 A and 10 V Vgs. It offers a continuous drain current of 14 A at ambient temperature (25°C) and 59 A at case temperature. The device exhibits a maximum gate charge of 17 nC at 4.5 V Vgs and an input capacitance of 1330 pF maximum at 15 V Vds. With a maximum power dissipation of 2.3 W (Ta) and 42 W (Tc), this MOSFET operates across a temperature range of -40°C to 150°C. The DIRECTFET™ MP package is supplied on tape and reel. This component is suitable for applications in power management and high-frequency switching power supplies.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 15 V |
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