IRF6636TRPBF
MOSFET N-CH 20V 18A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET IRF6636TRPBF is an N-Channel power MOSFET featuring a 20V drain-source breakdown voltage and a continuous drain current of 18A at 25°C ambient and 81A at 25°C case temperature. This device offers a low on-resistance of 4.5mOhm at 18A and 10V Vgs, with a gate charge of 27nC at 4.5V. The input capacitance (Ciss) is 2420pF maximum at 10V Vds. Designed for surface mounting, it utilizes the DIRECTFET™ Isometric ST package, supplied on tape and reel. Key parameters include a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2.45V at 250µA. Power dissipation is rated at 2.2W ambient and 42W case. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
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