IRF6636TR1PBF
MOSFET N-CH 20V 18A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6636TR1PBF, offers robust performance with a 20V drain-source voltage rating. This device features a low 4.5mOhm maximum Rds(on) at 18A and 10V Vgs, contributing to efficient power delivery. Continuous drain current is specified at 18A at 25°C ambient and 81A at 25°C case temperature. With a maximum gate charge of 27 nC at 4.5V, it facilitates high-speed switching. The component boasts a maximum power dissipation of 2.2W ambient and 42W case temperature. Packaged in a DirectFET™ Isometric ST on tape and reel, this surface mount device operates across a -40°C to 150°C junction temperature range. It finds application in power management systems, automotive electronics, and industrial power supplies.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
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