IRF6636TR1
MOSFET N-CH 20V 18A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6636TR1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 18A at 25°C ambient and 81A at 25°C case temperature. The IRF6636TR1 boasts an exceptionally low on-resistance of 4.5mOhm maximum at 18A and 10V gate drive. With a gate charge of 27 nC maximum at 4.5V and input capacitance of 2420 pF maximum at 10V, it offers efficient switching characteristics. The MOSFET is available in a DIRECTFET™ Isometric ST surface mount package, supplied on tape and reel. Its power dissipation is rated at 2.2W ambient and 42W case temperature, with an operating temperature range of -40°C to 150°C. This component finds use in power management solutions, automotive systems, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
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