IRF6636
MOSFET N-CH 20V 18A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6636 is a N-Channel Power MOSFET designed for demanding applications. This DIRECTFET™ ST package component features a 20V Drain-to-Source Voltage (Vdss) and supports a continuous drain current of 18A at ambient temperature (Ta) and 81A at case temperature (Tc). With a low on-resistance of 4.5mOhm at 18A and 10V Vgs, it offers excellent conduction efficiency. The device exhibits a maximum power dissipation of 2.2W (Ta) and 42W (Tc). Key electrical parameters include a gate charge (Qg) of 27 nC at 4.5V and input capacitance (Ciss) of 2420 pF at 10V. Operating across a temperature range of -40°C to 150°C, the IRF6636 is suitable for power management solutions in automotive and industrial sectors, delivered in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
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