IRF6635TRPBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6635TRPBF is an N-Channel Power MOSFET designed for high-density power applications. This device features a 30V drain-source voltage rating and supports continuous drain currents of 32A at ambient temperature and 180A at case temperature. The low on-resistance of 1.8mOhm at 32A and 10V gate-source drive, coupled with a maximum gate charge of 71nC at 4.5V, ensures efficient switching performance. With a maximum power dissipation of 89W (Tc), this MOSFET is suitable for demanding thermal environments. Key parameters include a maximum input capacitance (Ciss) of 5970pF at 15V and an operating junction temperature range of -40°C to 150°C. The DirectFET™ Isometric MX package enables robust thermal management and superior electrical performance, making it ideal for applications in automotive, industrial power supplies, and server infrastructure.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5970 pF @ 15 V |
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