IRF6635TR1PBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel IRF6635TR1PBF is a 30V, 32A (Ta) / 180A (Tc) surface mount device. This DirectFET™ MX packaged component offers a low Rds(on) of 1.8mOhm at 32A and 10V, with a drive voltage range from 4.5V to 10V. Key parameters include a gate charge of 71 nC at 4.5V and input capacitance of 5970 pF at 15V. The device supports a maximum continuous drain current of 32A at 25°C ambient and 180A at 25°C case temperature, with a maximum power dissipation of 2.8W (Ta) and 89W (Tc). Designed for efficient power management, the IRF6635TR1PBF is suitable for applications in automotive and industrial power systems. It operates within a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5970 pF @ 15 V |
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