IRF6635TR1
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6635TR1 is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 30V. This component offers a continuous drain current of 32A at 25°C ambient and up to 180A at 25°C case temperature. The Rds(on) is a maximum of 1.8mOhm at 32A and 10V Vgs. Key parameters include a maximum Gate Charge (Qg) of 71 nC at 4.5V and an input capacitance (Ciss) of 5970 pF at 15V Vds. It features a maximum power dissipation of 2.8W (Ta) up to 89W (Tc). The device is housed in a DirectFET™ Isometric MX surface mount package, supplied on tape and reel. Operating temperature range is -40°C to 150°C (TJ). This MOSFET is suitable for applications requiring efficient power switching in sectors such as automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5970 pF @ 15 V |
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