IRF6635
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6635, offers a 30V drain-source voltage with a continuous drain current of 32A at 25°C ambient and 180A at 25°C case temperature. This component features a low on-resistance of 1.8 mOhm at 32A and 10V Vgs, achieved with a 4.5V to 10V drive voltage range. The gate charge is specified at a maximum of 71 nC at 4.5V, and input capacitance (Ciss) is 5970 pF at 15V. With a maximum power dissipation of 2.8W ambient or 89W under case temperature conditions, the IRF6635 is housed in a DirectFET™ Isometric MX surface mount package, supplied on tape and reel. Ideal for applications requiring efficient power switching, this MOSFET operates within a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5970 pF @ 15 V |
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