IRF6633TRPBF
MOSFET N-CH 20V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6633TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-to-source breakdown voltage and a continuous drain current capability of 16A (at 25°C ambient) and 59A (at 25°C case). The low on-resistance of 5.6mOhm at 16A and 10V gate drive, coupled with a maximum gate charge of 17 nC at 4.5V, ensures efficient operation. With a maximum power dissipation of 2.3W (ambient) and 89W (case), this MOSFET is suitable for demanding thermal environments. The device utilizes Infineon's advanced DIRECTFET™ Isometric MP package for optimal thermal management and performance. Applications include automotive power management, industrial power supplies, and high-performance computing.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 10 V |
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