IRF6633TR1PBF
MOSFET N-CH 20V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel, part number IRF6633TR1PBF, is a 20V device in a DirectFET™ Isometric MP package, suitable for surface mount applications. Featuring a continuous drain current of 16A at 25°C ambient and 59A at 25°C case temperature, this component offers a low on-resistance of 5.6mOhm maximum at 16A and 10V Vgs. The device supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge of 17 nC at 4.5V and input capacitance of 1250 pF at 10V Vds. Power dissipation is rated at 2.3W ambient and 89W case. Operating temperature ranges from -40°C to 150°C. This MOSFET is utilized in demanding applications such as automotive power management and high-efficiency power conversion.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 10 V |
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