IRF6633ATR1PBF
MOSFET N-CH 20V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6633ATR1PBF, is designed for efficient switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C ambient, scaling to 69A at 25°C case temperature. The Rds On is a maximum of 5.6mOhm at 16A and 10V gate-source voltage. With a maximum gate charge (Qg) of 17 nC at 4.5V and an input capacitance (Ciss) of 1410 pF at 10V, it offers optimized switching performance. The device operates across a temperature range of -40°C to 150°C (TJ) and is packaged in a surface mount DirectFET™ Isometric MU, supplied on tape and reel. This MOSFET is suitable for use in power management solutions across various industrial and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MU |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MU |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 10 V |
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