IRF6631TRPBF
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6631TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current of 13A at ambient temperature and 57A at case temperature. With a low Rds(on) of 7.8mOhm maximum at 13A and 10V, it minimizes conduction losses. The MOSFET is packaged in a surface mount DIRECTFET™ Isometric SQ package, supporting efficient thermal management with a power dissipation of 2.2W (Ta) and 42W (Tc). Key parameters include a Gate Charge (Qg) of 18 nC at 4.5V and an Input Capacitance (Ciss) of 1450pF at 15V. Operating temperature range is -40°C to 150°C (TJ). This component is suitable for use in power management, automotive, and industrial applications requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
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