IRF6629TRPBF
MOSFET N-CH 25V 29A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6629TRPBF is an N-Channel MOSFET designed for high-efficiency power conversion. This component features a 25V drain-source breakdown voltage and a continuous drain current capability of 29A at 25°C ambient and 180A at 25°C case temperature. The low on-resistance of 2.1mOhm at 29A and 10V gate drive, coupled with a maximum gate charge of 51 nC at 4.5V, facilitates high switching frequencies. The device offers a maximum power dissipation of 2.8W ambient and 100W case. With a maximum operating junction temperature of 150°C and a gate-source voltage range of ±20V, the IRF6629TRPBF is suitable for demanding applications in automotive and industrial power management. It is supplied in a DIRECTFET™ Isometric MX surface mount package on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4260 pF @ 13 V |
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