IRF6629TR1PBF
MOSFET N-CH 25V 29A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel MOSFET, part number IRF6629TR1PBF. This DirectFET™ Isometric MX packaged device offers a 25V drain-source breakdown voltage and supports a continuous drain current of 29A at 25°C ambient temperature, scaling to 180A under typical case temperature conditions. Featuring a low on-resistance of 2.1mOhm maximum at 29A and 10V Vgs, this MOSFET is optimized for high-efficiency switching applications. Key parameters include a maximum gate charge of 51 nC at 4.5V Vgs and an input capacitance of 4260 pF at 13V Vds. Power dissipation is rated at 2.8W (Ta) and 100W (Tc). The operating temperature range is -40°C to 150°C. This component is commonly utilized in power management, automotive, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4260 pF @ 13 V |
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